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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1134 DESCRIPTION *Collector Current: IC= 4A *Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@IC= 2A *High Collector Power Dissipation *Complement to Type 2SB858 APPLICATIONS *Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak Total Power Dissipation @ TC=25 Junction Temperature 8 A PC 40 W TJ 150 Tstg Storage Temperature Range -45~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(on) ICBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current DC Current Gain DC Current Gain Current-Gain--Bandwidth Product CONDITIONS IC= 50mA ; RBE= IC= 10A ; IE= 0 IE= 10A ; IC= 0 IC= 2A; IB= 0.2A B 2SD1134 MIN 60 70 5 TYP. MAX UNIT V V V 1.0 1.0 1 60 35 7 320 V V A IC= 1A ; VCE= 4V VCB= 50V ; IE= 0 IC= 1A ; VCE= 4V IC= 0.1A ; VCE= 4V IC= 0.5A ; VCE= 4V MHz hFE-1 Classifications B 60-120 C 100-200 D 160-320 isc Websitewww.iscsemi.cn 2 |
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